A fully analytical partitioned-charge-based model for linearly-graded SiGe-base heterojunction bipolar transistors
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference24 articles.
1. Limitations of quasi-static capacitance models for the MOS transistor
2. Significance of the channel—Charge partition in the transient MOSFET model
3. A nonquasi-static MOSFET model for SPICE-transient analysis
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Analytical modeling of base transit time for a Si1−yGey heterojunction bipolar transistor;2009 IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC);2009-12
2. Analytical modelling of current gain and frequency characteristics under high injection levels in Si/SiGe heterojunction bipolar transistors at 77 and 300K;Microelectronics Journal;1999-12
3. Long-term reliability of Si-Si/sub 0.7/Ge/sub 0.3/-Si HBTs from accelerated lifetime testing;2001 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems. Digest of Papers (IEEE Cat. No.01EX496)
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