A new method to fabricate Au/n-type InP Schottky contacts with an interfacial layer
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference33 articles.
1. InP Schottky-gate field-effect transistors
2. Schottky and field‐effect transistor fabrication on InP and GaInAs
3. Enhancement of effective electron mobility in the channel of InP metal‐insulator‐semiconductor field‐effect transistors
4. Fully ion-implanted InP JFET with buried p-layer
5. Continuously tunable distributed feedback laser diode
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