Hafnium dioxide effect on the electrical properties of M/n-GaN structure
Author:
Ali Sadoun1, Sedik Mansouri1, Mohammed Chellali1, Nacereddine Lakhdar2, Abdelkader Hima2, Zineb Benamara1
Affiliation:
1. Laboratoire de Micro-Electronique Appliquée , Université Djillali Liables de Sidi Bel Abbes , BP 89, 22000 Sidi Bel Abbes , Algeria 2. University of El Oued , Fac. Technology , 39000 El Oued , Algeria
Abstract
Abstract
In the present paper, using of SILVACO-TCAD numerical simulator for studying the enhancement in Pt/n-GaN Schottky diode current–voltage (I-V) characteristics by introduction of a layer of hafnium dioxide (HfO2) (with a thickness e = 5 nm) between the Pt contact and semiconductor interface of GaN is reported. The simulation of I-V characteristics of Pt/n-GaN was done at a temperature of 300 K. However, the simulation of Pt/HfO2/n-GaN structure was performed in a temperature range of 270 – 390 K at steps of 30 K. The electrical parameters: barrier height (Φb), ideality factor and series resistance have been calculated using different methods: conventional I-V, Norde, Cheung, Chattopadhyay and Mikhelashvili. Statistical analysis showed that the metal-insulator-semiconductor (Pt/HfO2/n-GaN) structure has a barrier height of 0.79 eV which is higher compared with the (Pt/n-GaN) structure (0.56 eV). The parameters of modified Richardson
(
(
ln
(
I
0
T
2
)
-
(
q
2
σ
s
0
2
2
kT
2
)
=
ln
(
AA
*
)
-
q
∅
B
0
kT
)
(\left( {\ln \left( {{{{{\rm{I}}_0}} \over {{{\rm{T}}^{\rm{2}}}}}} \right) - \left( {{{{{\rm{q}}^2}\sigma _{{\rm{s}}0}^2} \over {2{\rm{k}}{{\rm{T}}^2}}}} \right) = \ln \left( {{\rm{AA*}}} \right) - {{{\rm{q}}{\emptyset _{{\rm{B}}0}}} \over {{\rm{kT}}}}} \right)
equation versus (
1
kT
{1 \over {{\rm{kT}}}}
) have been extracted using the mentioned methods. The following values:
A
Simul
*
=
22.65
A
/
cm
2
⋅
K
2
{\rm{A}}_{{\rm{Simul}}}^* = 22.65\,{\rm{A/c}}{{\rm{m}}^{\rm{2}}} \cdot {{\rm{K}}^2}
, 14.29 A/cm2 K2, 25.53 A/cm2 K2 and 21.75 A/cm2 K2 were found. The Chattopadhyay method occurred the best method for estimation the theoretical values of Richardson constant.
Publisher
Walter de Gruyter GmbH
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
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