Determination of LDD MOSFET drain resistance from device simulation
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference17 articles.
1. Gate-voltage-dependent effective channel length and series resistance of LDD MOSFET's
2. Source-and-drain series resistance of LDD MOSFET's
3. A new approach to determine the drain-and-source series resistance of LDD MOSFET's
4. Proc. ESSDERC 1992;Otten,1992
5. Simple method to extract gate voltage dependent source/drain resistance in MOSFETs
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2. Technology CAD: Device simulation and characterization;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2002
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4. Discussion;Solid-State Electronics;1998-01
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