Extraction of the source and drain series resistances of MOSFETs
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Publisher
Springer US
Link
http://link.springer.com/content/pdf/10.1007/978-1-4615-5415-8_5.pdf
Reference35 articles.
1. F. J. García Sánchez, A. Ortiz-Conde, G. De Mercato, J. J. Liou, and L. Rech, “Eliminating parasitic resistances in parameter extraction of semiconductor device-models,” Proc. First IEEE Intl. Caracas Conf. Devices, Circuits and Syst., Caracas, Venezuela, Dec. 1995, p. 298.
2. F. J. García Sánchez, A. Ortiz-Conde, and J. J. Liou, “A parasitic series resistance-independent method for device-model parameter extraction,” IEE Proc.Circuits Devices Syst., vol. 143, No. 1, pp. 68–70, Feb. 1996
3. P. R. Karlsson and K. O. Jeppson, “Extraction of series resistance-independent of MOS transistor model parameters,” IEEE Trans. Electron Devices, vol. ED-13, pp. 581–583, Nov. 1992.
4. K. K. Ng and J. R. Brews, Jr, “Measuring the effective channel length of MOSFETs,” IEEE Cir. & Dev. Magazine, vol. 6, pp. 33–38, 1990.
5. D. K. Schroeder, Semiconductor Material and Device Characterization, Wiley, New York, 1990.
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