Bestimmung der zusammensetzung von ternären III–V-verbindungshalbleitern aus dem spektrum der oberflächenfotospannung
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference13 articles.
1. Composition Dependence of the Ga1−xAlxAs Direct and Indirect Energy Gaps
2. Determination of the Composition of GaxAl1-xAs from the Photoresponse of Schottky Barriers
3. The Preparation of Homogeneous and Reproducible Solid Solutions of GaP-GaAs
4. ENERGY-GAP VARIATION IN MIXED III–V ALLOYS
5. Conduction Band Minima ofGa(As1−xPx)
Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Growth Characteristics of GaAlAs Layers Obtained by Long Term Finite Melt Liquid Phase Epitaxy;Crystal Research and Technology;1993
2. Investigation of oxidized aIIIBv surfaces by photoresponse;Acta Physica Academiae Scientiarum Hungaricae;1980-04
3. Carrier lifetime in silicon and its impact on solar cell characteristics;Topics in Applied Physics;1979
4. Caractérisation optique rapide, localisée et non destructrice de couches du type A1 − xBxC;Thin Solid Films;1977-04
5. Phase Diagrams of Semiconducting Compounds (III) Thermodynamic Calculation of the Ternary Melting Diagram of GaAlAs;Kristall und Technik;1974
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