Insulator polarization effect in quasi-static and high-frequency C(V) curves
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference10 articles.
1. An investigation of surface states at a silicon/silicon oxide interface employing metal-oxide-silicon diodes
2. Surface states at steam-grown silicon-silicon dioxide interfaces
3. A quasi-static technique for MOS C-V and surface state measurements
4. Method of separating hysteresis effects from MIS capacitance measurements
5. Measurements of interface state density in MNOS structures
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4. Effects of oxygen content and oxide layer thickness on interface state densities for metal‐oxynitride‐oxide‐silicon devices;Journal of Applied Physics;1991-08
5. Two‐phase structure of plasma‐polymerized thiophene‐passivated GaAs Schottky‐like metal‐insulator‐semiconductor diodes;Journal of Applied Physics;1990-12
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