Two step doping channel FET with symmetric normally on and normally off characteristics-Reference-Cited by-同舟云学术

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Two step doping channel FET with symmetric normally on and normally off characteristics

Published:1995-05 Issue:5 Volume:38 Page:961-963
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Lour Wen-Shiung

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference6 articles.

1. A high-current drivability i-AlGaAs/n-GaAs doped-channel MIS-Like FET (DMT)

2. An In0.52Al0.48As/n+-In0.53Ga0.47As MISFET with a heavily doped channel

3. High-transconductance AlInAs/GaInAs HIFETs grown by MOCVD

4. Graded channel FET's: Improved linearity and noise figure

5. 1983 GaAs IC Symp. Dig.;Dambkes,1983

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Application of a new airbridge-gate structure for high-performance Ga0.51In0.49P/In0.15Ga0.85As/GaAs pseudomorphic field-effect transistors;Applied Physics Letters;1999-04-05

2. Comparisons between mesa- and airbridge-gate AlGaAs/InGaAs doped-channel field-effect transistors;Semiconductor Science and Technology;1998-07-01

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