A fully nonparabolic hydrodynamic model for describing hot electron transport in GaAs
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference16 articles.
1. An investigation of steady-state velocity overshoot in silicon
2. Two-dimensional numerical simulation of energy transport effects in Si and GaAs MESFET's
3. Two-dimensional hot-electron models for short-gate-length GaAs MESFET's
4. Theoretical contribution to the design of millimeter-wave TEO's
5. A Self-Consistent Monte Carlo Particle Model to Analyze Semiconductor Microcomponents of any Geometry
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1. Thermal Energy Diffusion Incorporating Generalized Einstein Relation for Degenerate Semiconductors;Applied Sciences;2017-07-31
2. Numerical analysis of formation properties of a high-field dipole domain for submicron GaAs field-effect transistor devices;Journal of Applied Physics;2012-03
3. A review of hydrodynamic and energy-transport models for semiconductor device simulation;Proceedings of the IEEE;2003-02
4. Technology CAD: Device simulation and characterization;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2002
5. Maximum entropy principle within a total energy scheme: Application to hot-carrier transport in semiconductors;Physical Review B;2000-06-15
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