An investigation of steady-state velocity overshoot in silicon
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference24 articles.
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4. Frequency Limits of GaAs and InP Field-Effect Transistors at 300 K and 77 K with Typical Active Layer Doping;Maloney;IEEE Trans. Electron Devices,1976
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