Frequency limits of GaAs and InP field-effect transistors at 300 K and 77 K with typical active-layer doping

Author:

Maloney T.J.,Frey J.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Cited by 23 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. A COMPUTATIONALLY EFFICIENT VELOCITY‐SPACE TRANSPORT MODEL FOR DEVICE SIMULATION;COMPEL - The international journal for computation and mathematics in electrical and electronic engineering;1993-04-01

2. Gavels, a velocity-space GaAs transport model—I. Steady-state simulation;Solid-State Electronics;1992-04

3. An efficient velocity-space model of carrier transport in Gallium Arsenide;International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;1991-12

4. MESFET Devices;Microwave Semiconductor Devices;1991

5. Quantum Mechanical and Nonstationary Transport Phenomena in Nanostructured Silicon Inversion Layers;VLSI Electronics Microstructure Science;1989

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