Frequency response of charge transfer in MOS inversion layers
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference14 articles.
1. Impedance of semiconductor-insulator-metal capacitors
2. Exact frequency dependent complex admittance of the MOS diode including surface states, Shockley-Read-Hall (SRH) impurity effects, and low temperature dopant impurity response
3. Inversion charge redistribution model of the high-frequency MOS capacitance
4. An improved high‐frequency MOS capacitance formula
5. Differential equation solutions of MOS transmission line models generalized to lossy cases
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1. Quantum Capacitance in Topological Insulators;Scientific Reports;2012-09-18
2. Analytic model of parasitic capacitance attenuation in CMOS devices with hyper-thin oxides;Electronics Letters;2000
3. Impact of tunnel currents and channel resistance on the characterization of channel inversion layer charge and polysilicon-gate depletion of sub-20-Å gate oxide MOSFETs;IEEE Transactions on Electron Devices;1999
4. Small Signal Characterization of VLSI MOSFETs;The Kluwer International Series in Engineering and Computer Science;1995
5. Analysis and simulation of the frequency response of MOSFETs with uniform and/or local oxide degradation;Solid-State Electronics;1993-05
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