Inversion charge redistribution model of the high-frequency MOS capacitance
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference19 articles.
1. An investigation of surface states at a silicon/silicon oxide interface employing metal-oxide-silicon diodes
2. Field Effect-Capacitance Analysis of Surface States on Silicon
3. Investigation of thermally oxidised silicon surfaces using metal-oxide-semiconductor structures
4. Ion Transport Phenomena in Insulating Films
5. Limitations of the MOS capacitance method for the determination of semiconductor surface properties
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