Exact frequency dependent complex admittance of the MOS diode including surface states, Shockley-Read-Hall (SRH) impurity effects, and low temperature dopant impurity response-Reference-Cited by-同舟云学术

Exact frequency dependent complex admittance of the MOS diode including surface states, Shockley-Read-Hall (SRH) impurity effects, and low temperature dopant impurity response

Published:1973-01 Issue:1 Volume:16 Page:93-113
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Temple V.,Shewchun J.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference21 articles.

1. The exact low-frequency capacitance-voltage characteristics of metal-oxide-semiconductor (MOS) and semiconductor-insulator-semiconductor (SIS) structures

2. Exact analytical solution of high frequency lossless MOS capacitance-voltage characteristics and validity of charge analysis

3. The Si-SiO2Interface - Electrical Properties as Determined by the Metal-Insulator-Silicon Conductance Technique

4. Surface states at steam-grown silicon-silicon dioxide interfaces

5. Si-SiO[sub 2] Fast Interface State Measurements

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