A D.C. to 16 GHz indium phosphide MISFET
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference20 articles.
1. A microwave InP/SiO2MISFET
2. n-channel inversion-mode InP m.i.s.f.e.t.
3. n-channel formation on semi-insulating InP surface by m.i.s.f.e.t.
4. InP/SiO2MIS structure
5. InP–SiO2 m.i.s. structure with reduced interface state density near conduction band
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