A nondestructive method for measuring the photoelectric parameters of wafers with p-n junctions
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference12 articles.
1. A generalised approach to lifetime measurement in pn junction solar cells
2. Characterization of silicon wafers by transient microwave photoconductivity measurements
3. Investigation on Defects in Czochralski Silicon with High-Sensitive Laser/Microwave Photoconductance Technique
4. Nondestructive Measurement of Minority Carrier Lifetimes in Si Wafers Using Frequency Dependence of ac Photovoltages
Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Reducing the Contrast in Photosensitivity for Inhomogeneous n +−p(n)−p + Silicon Structures, Measured by Illuminating the Full p–n Junction Surface;Bulletin of the Russian Academy of Sciences: Physics;2021-01
2. A Device for Noncontact Determination of the Photosensitivity Distribution on Areas of n+–p(n)–p+-Type Silicon Structures;Instruments and Experimental Techniques;2020-07-28
3. Noncontact Detection of the Photosensitivity Inhomogeneities of HIT Heterostructures Based on α-Si:H/c-Si;Bulletin of the Russian Academy of Sciences: Physics;2018-11
4. Noncontact determination of the rate of surface recombination of nonequilibrium charge carriers at the p–p+ (n–n+) boundaries of n+–p(n)–p+ silicon structures by means of compensation;Bulletin of the Russian Academy of Sciences: Physics;2018-01
5. Separate determination of the photoelectric parameters of n + - p ( n )- p + silicon structure base region by noncontact method based on measurements of quantum efficiency relationships at two wavelengths;Modern Electronic Materials;2017-09
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