High-temperature carrier transport in n-type epitaxial GaAs-Reference-Cited by-同舟云学术

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High-temperature carrier transport in n-type epitaxial GaAs

Published:1980-02 Issue:2 Volume:23 Page:109-116
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Nichols K.H.,Yee Camellia M.L.,Wolfe C.M.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference47 articles.

1. Impurity gradients caused by surface states and substrate doping in epitaxial GaAs

2. Herstellung und elektrische Eigenschaften von InP und GaAs

3. The preparation and properties of gallium arsenide single crystals

4. High‐Temperature Hall Coefficient in GaAs

5. Energy of Spectrum and Scattering of Current Carriers in Gallium Arsenide

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