The effect of field dependent mobility on the threshold voltage of a small geometry MOSFET
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference8 articles.
1. An analysis of the threshold voltage for short-channel IGFET's
2. A simple approach for accurately modeling the threshold voltage of short-channel mosts
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4. An accurate two-dimensional numerical analysis of the MOS transistor
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