A quasi-three-dimensional large-signal circuit model for lateral transient analysis of MOS device-Reference-Cited by-同舟云学术

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A quasi-three-dimensional large-signal circuit model for lateral transient analysis of MOS device

Published:1980-04 Issue:4 Volume:23 Page:305-315
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Ho Allen P.I.,Sah C.T.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference26 articles.

1. The silicon insulated gate field effect transistor;Hofstein,1963

2. MOSFET memory circuits;Terman,1971

3. Charge-coupled devices—a new approach to MOS device structures;Boyle;IEEE Spectrum,1971

4. Charge-coupled devices-an overview;Kosonocky;Western Electron. Show and Conv. Tech. Papers,1974

5. Charged-Coupled Devices: Technology and Applications;Kosonocky,1977

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Der MOSFET im dynamischen Betrieb;MOS-Feldeffekttransistoren;1994

2. Circuit technique for semiconductor-device analysis with junction diode open circuit voltage decay example;Solid-State Electronics;1988-02

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