Circuit technique for semiconductor-device analysis with junction diode open circuit voltage decay example
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference51 articles.
1. The equivalent circuit model in solid-state electronics—Part I: The single energy level defect centers
2. The equivalent circuit model in solid-state electronics—Part II: The multiple energy level impurity centers
3. The equivalent circuit model in solid-state electronics—III
4. Equivalent circuit models in semiconductor transport for thermal, optical, auger-impact, and tunnelling recombination–generation–trapping processes
5. Small-signal equivalent π networks for carrier generation–recombination–trapping at imperfection centres in semiconductors
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4. Determination of silicon power diode recombination parameters by combining open circuit voltage decay and storage time-reverse recovery data;Solid-State Electronics;1991-07
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