Small-signal equivalent π networks for carrier generation–recombination–trapping at imperfection centres in semiconductors
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_19710489?crawler=true&mimetype=application/pdf
Reference5 articles.
Cited by 16 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Equivalent circuits for recombination-generation processes in semiconductors: A unified approach;Solid-State Electronics;1989-07
2. Circuit technique for semiconductor-device analysis with junction diode open circuit voltage decay example;Solid-State Electronics;1988-02
3. New integral representations of circuit models and elements for the circuit technique for semiconductor device analysis;Solid-State Electronics;1987-12
4. Analytic transformation of the generation-recombination centres in the transmission-line equivalent-circuit model of a semiconductor;Electronics Letters;1983
5. Differential equation solutions of MOS transmission line models generalized to lossy cases;Solid-State Electronics;1978-09
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