An analytical pull-up transient model for a BiCMOS inverter
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference15 articles.
1. Perspective on BiCMOS VLSIs
2. Optimization and scaling of CMOS-bipolar drivers for VLSI interconnects
3. A generalized algorithm for CMOS circuit delay, power, and area optimization
4. An analytical model for the determination of the transient response of CML and ECL gates
5. Analysis and characterization of BiCMOS for high-speed digital logic
Cited by 10 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Comparison of Gummel-Poon and quasi-saturation models in BiCMOS switching;International Journal of Electronics;1998-04
2. Circuit analysis of BiCMOS gate delay;International Journal of Electronics;1997-07
3. An accurate transient model for BiCMOS gate optimization;International Journal of Electronics;1997-05
4. Low-voltage full-swing non-complementary BiCMOS inverters;International Journal of Electronics;1995-05
5. Turn-on transient analysis of a power IGBT with an inductive load in series with a resistive load;Solid-State Electronics;1994-09
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