An accurate transient model for BiCMOS gate optimization-Reference-Cited by-同舟云学术

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An accurate transient model for BiCMOS gate optimization

Published:1997-05 Issue:5 Volume:82 Page:503-514
ISSN:0020-7217
Container-title:International Journal of Electronics
language:en
Short-container-title:International Journal of Electronics

Author:

JIMENEZ VICENTE,ALCUBILLA RAMON

Publisher

Informa UK Limited

Subject

Electrical and Electronic Engineering

Link

https://www.tandfonline.com/doi/pdf/10.1080/002072197135887

Reference9 articles.

1. An accurate analytical BiCMOS delay expression and its application to optimizing high-speed BiCMOS circuits

2. Analysis and characterization of BiCMOS for high-speed digital logic

3. Analysis and optimization of BiCMOS gate circuits

4. A closed-form delay expression for digital BiCMOS circuits with high-injection effects

5. An analytical pull-up transient model for a BiCMOS inverter

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The cause of switching noise;Analysis and Solutions for Switching Noise Coupling in Mixed-Signal ICs;1999

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