Growth and characterization of large diameter undoped semi-insulating GaAs for direct ion implanted FET technology-Reference-Cited by-同舟云学术

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Growth and characterization of large diameter undoped semi-insulating GaAs for direct ion implanted FET technology

Published:1981-05 Issue:5 Volume:24 Page:387-399
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Thomas R.N.,Hobgood H.M.,Eldridge G.W.,Barrett D.L.,Braggins T.T.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference21 articles.

1. Chromium profiles in semi‐insulating GaAs after annealing with a Si3N4encapsulant

2. A Technique for Pulling Single Crystals of Volatile Materials

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