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An analytical model for hot-carrier-induced degradation of deep-submicron n-channel LDD MOSFETs

  • Published:1995-06 Issue:6 Volume:38 Page:1191-1196
  • ISSN:0038-1101
  • Container-title:Solid-State Electronics
  • language:en
  • Short-container-title:Solid-State Electronics

Author:

Goo Jung-Suk,Kim Young-Gwan,L'Yee Hyeokjae,Kwon Ho-Yup,Shin Hyungsoon

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Cited by 27 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Prompt Shift of On-State Resistance in LDMOS Devices: Causes, Recovery, and Reliability Implications;2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD);2024-06-02

2. A Comprehensive SPICE Modeling Methodology for Hot-carrier Degradation;2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM);2024-03-03

3. A Generic Framework for MOSFET Reliability—Part II: Gate and Drain Stress—HCD;IEEE Transactions on Electron Devices;2024-01

4. Hot Carrier Injection Reliability in Nanoscale Field Effect Transistors: Modeling and Simulation Methods;Electronics;2022-11-04

5. Modeling of Classical Channel Hot Electron Degradation in n-MOSFETs Using TCAD;IEEE Transactions on Electron Devices;2022-07
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