Low level currents in insulated gate field effect transistors-Reference-Cited by-同舟云学术

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Low level currents in insulated gate field effect transistors

Published:1972-03 Issue:3 Volume:15 Page:293-302
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Barron M.B.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference15 articles.

1. Design theory of a surface field-effect transistor

2. Characteristics of the metal-Oxide-semiconductor transistors

3. Characteristics and Operation of MOS Field Effect Devices;Richman,1967

4. J.S. Brugler, private communication.

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