Ballistic Transport-Reference-Cited by-同舟云学术

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Ballistic Transport

Published:1988-03 Issue:3-4 Volume:31 Page:617-618
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Heiblum M.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference2 articles.

1. Ballistic Electron Transport in Hot Electron Transistors;Heiblum,1987

2. Ballistic Transport and Electron Spectroscopy in Tunnelling Hot Electron Transfer Amplifiers (THETA);Heiblum,1986

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Vertical Graphene-Base Hot-Electron Transistor;Nano Letters;2013-05-21

2. Direct current and high frequency performance of thin film InP-based tunneling hot electron transfer amplifiers;Applied Physics Letters;1997-05-05

3. Quasiballistic model of current transport and formation of the S-type current-voltage characteristic in the lightly doped, double-barrier heterostructure AlxGa1−x As-GaAs-AlAs;Semiconductors;1997-01

4. Photon-assisted resonant tunneling through a double quantum well structure: nanometer infrared tunable detector;Physics Letters A;1991-02

5. Field-assisted infrared photoemission of metal-semiconductor structures;Surface Science;1989-04

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