Quasiballistic model of current transport and formation of the S-type current-voltage characteristic in the lightly doped, double-barrier heterostructure AlxGa1−x As-GaAs-AlAs-Reference-Cited by-同舟云学术

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Quasiballistic model of current transport and formation of the S-type current-voltage characteristic in the lightly doped, double-barrier heterostructure AlxGa1−x As-GaAs-AlAs

Published:1997-01 Issue:1 Volume:31 Page:81-83
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Belyantsev A. M.,Romanova Yu. Yu.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/1.1187042.pdf

Reference8 articles.

1. A. M. Belyantsev, E. V. Demidov, and Yu. A. Romanov, Lith. J. Phys. 32, 31 (1992).

2. T. K. Higman, L. M. Miller et al., Appl. Phys. Lett. 53, 1623 (1988).

3. A. M. Belyantsev and Yu. Yu. Romanova, Fiz. Tekh. Poluprovodn. 29, 1498 (1995) [Semiconductors 29, 781 (1995)].

4. M. Heiblum, Solid-State Electron. 31, 617 (1988).

5. A. Mitskyavichus and A. Reklaitis, Fiz. Tekh. Poluprovodn. 20, 1693 (1986) [Sov. Phys. Semicond. 20, 1060 (1986)].

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