Half-implicit difference scheme for numerical simulation of transient processes in semiconductor devices
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference20 articles.
1. Two-dimensional computer simulation for switching a bipolar transistor out of saturation
2. Two-dimensional nonisothermal carrier flow in a transistor structure under reactive circuit conditions
3. Semiconductor Analysis Using Finite Elements—Part II: IGFET and BJT Case Studies
4. Finite-Element Analysis of Semiconductor Devices: The FIELDAY Program
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