Semiconductor Analysis Using Finite Elements—Part II: IGFET and BJT Case Studies-Reference-Cited by-同舟云学术

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Semiconductor Analysis Using Finite Elements—Part II: IGFET and BJT Case Studies

Published:1981-07 Issue:4 Volume:25 Page:246-260
ISSN:0018-8646
Container-title:IBM Journal of Research and Development
language:
Short-container-title:IBM J. Res. & Dev.

Author:

Hachtel G. D.,Mack M. H.,O'Brien R. R.

Publisher

IBM

Subject

General Computer Science

Link

http://xplorestaging.ieee.org/ielx5/5288520/5390646/05390649.pdf?arnumber=5390649

Cited by 15 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Spherical Harmonics Expansion and Multi-Scale Modeling;Springer Handbook of Semiconductor Devices;2022-11-11

2. Finite-element analysis of semiconductor devices: The FIELDAY program;IBM Journal of Research and Development;2000-01

3. Hexahedral finite elements for the stationary semiconductor device equations;Computer Methods in Applied Mechanics and Engineering;1990-11

4. Evolution systems in semiconductor device modeling: A cyclic uncoupled line analysis for the gummel map;Mathematical Methods in the Applied Sciences;1987

5. Half-implicit difference scheme for numerical simulation of transient processes in semiconductor devices;Solid-State Electronics;1986-03

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