Monte Carlo study of a 50 nm-dual-gate HEMT providing against short-channel effects
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference10 articles.
1. P. Dollfus, C. Bru and P. Hesto, J. appl. Phys., to be published
2. Short-channel effects in subquarter-micrometer-gate HEMTs: simulation and experiment
3. Short-channel effects in sub-100 nm GaAs MESFETs
4. DC and RF characteristics of InAlAs/InGaAs dual-gate TEGFETs
5. Split‐gate field‐effect transistor
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