2D analytical modeling and simulation of dual material DG MOSFET for biosensing application

Author:

Buvaneswari B.,Balamurugan N.B.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering

Cited by 42 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. A Comparative Study on the Effect of Dielectric Gate Materials on Analog and RF Performance of a Symmetrical Underlap DG Si/SiGe-based MOS-HEMT Device;2024 5th International Conference on Recent Trends in Computer Science and Technology (ICRTCST);2024-04-09

2. Exploring the Potential of Dielectric Modulated SOI Junctionless FinFETs for Label-Free Biosensing;Journal of Electronic Materials;2023-12-07

3. Numerical Simulation of Hetero Dielectric Trench Gate JAM Gate-All-Around FET (HDTG-JAM-GAAFET) for Label Free Biosensing Applications;ECS Journal of Solid State Science and Technology;2023-12-01

4. Gate electrode stacked source/drain SON trench MOSFET for biosensing application;Physica Scripta;2023-11-30

5. A New Perspective on Sensitivity for Biosensing Applications in Nanocavity-Embedded Dual Metal Surrounding Gate TFETs;2023 International Conference on Research Methodologies in Knowledge Management, Artificial Intelligence and Telecommunication Engineering (RMKMATE);2023-11-01

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