An appraisal of the one-flux method for treating carrier transport in modern semiconductor devices
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference28 articles.
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4. Diffusion and Drift of Minority Carriers in Semiconductors for Comparable Capture and Scattering Mean Free Paths
5. Analysis of Semiconductor p‐n Junctions and Junction Devices by a Flux Method
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2. Effect of Boundary Conditions on Thermal Noise of Intrinsic Terminal Currents in Bipolar Transistors Pertinent to Quasi-Ballistic Transport;IEEE Transactions on Electron Devices;2013-12
3. Impact of Ballistic and Quasi-Ballistic Transport on Performances of Double-Gate MOSFET-Based Circuits;IEEE Transactions on Electron Devices;2008-09
4. Fokker–Planck approach to extending the one-flux method of carrier transport in semiconductors to variable energies;Journal of Applied Physics;2003
5. The drift-diffusion equation revisited;Solid-State Electronics;1998-03
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