Electron transport with the McKelvey–Shockley flux method: The effect of electric field and electron–phonon scattering

Abstract

The McKelvey–Shockley (McK–S) flux method is a semi-classical transport theory that captures ballistic and non-equilibrium effects and can treat carrier flow from the nano-scale to the macro-scale. This work introduces a revised formulation of the McK–S flux equations for electron transport, in order to resolve the energy dependence of the fluxes, capture the effect of electric field, and include acoustic/optical phonon scattering. This updated McK–S formalism is validated by simulating electron transport across a finite-length semiconductor under the influence of a constant electric field under varying conditions, from ballistic to diffusive and from near-equilibrium to non-equilibrium, and benchmarked against solutions of the Boltzmann transport equation (BTE). The McK–S results display good agreement with those of the BTE, including the directed fluxes and heating profiles, with the electron density showing larger differences when far from equilibrium. Compared to other more rigorous techniques, the McK–S flux method is physically intuitive and computationally efficient and, thus, well suited to treat systems that are complex and/or span multiple length scales.