A study of the electrical and photovoltaic properties of magnetron sputtered Ti/p-InP Schottky barriers-Reference-Cited by-同舟云学术

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A study of the electrical and photovoltaic properties of magnetron sputtered Ti/p-InP Schottky barriers

Published:1988-11 Issue:11 Volume:31 Page:1629-1634
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Van Meirhaeghe R.L.,Van den Berghe L.M.O.,Laflère W.H.,Cardon F.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference17 articles.

1. In‐depth profiling of sputter‐induced space‐charge compensation inp‐silicon Schottky barriers

2. Barrier‐height fixation in dc‐sputtered Au‐p silicon Schottky barriers

3. Sputtered TiW/Au Schottky barriers on GaAs

4. Sputtered oxide/indium phosphide junctions and indium phosphide surfaces

5. The Effects of Ion Beam Etching on Si, Ge, GaAs , and InP Schottky Barrier Diodes

Cited by 35 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Characterization of interface states and investigation of possible current conduction mechanisms in the Pt, Au, Cu/n-InP Schottky diodes;Physica Scripta;2024-08-21

2. Achieving high performance Ga2O3 diodes by adjusting chemical composition of tin oxide Schottky electrode;Semiconductor Science and Technology;2019-06-07

3. Synthesis of novel counter electrode by combination of mesoporous–macroporous CZTS films for enhanced performance of quantum-dots sensitized solar cells;Journal of Materials Science: Materials in Electronics;2018-08-24

4. Au/n-InP Schottky diodes using an Al2O3interfacial layer grown by atomic layer deposition;Semiconductor Science and Technology;2017-01-19

5. THE CHARACTERISTIC DIODE PARAMETERS IN Ti/p-InP CONTACTS PREPARED BY DC SPUTTERING AND EVAPORATION PROCESSES OVER A WIDE MEASUREMENT TEMPERATURE;Surface Review and Letters;2016-09

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