Achieving high performance Ga2O3 diodes by adjusting chemical composition of tin oxide Schottky electrode-Reference-Cited by-同舟云学术

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Achieving high performance Ga2O3 diodes by adjusting chemical composition of tin oxide Schottky electrode

Published:2019-06-07 Issue:7 Volume:34 Page:075001
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Du Lulu,Xin Qian^ORCID,Xu Mingsheng,Liu Yaxuan,Liang Guangda,Mu Wenxiang,Jia Zhitai^ORCID,Wang Xinyu^ORCID,Xin Gongming,Tao Xu-Tang,Song Aimin^ORCID

Funder

the Natural Science Foundation of Shandong Province

the National Key Research and Development Program of China

Engineering and Physical Sciences Research Council

the Fundamental Research Funds of Shandong University

the Key Research and Development Program of Shandong Province

China Postdoctoral Science Foundation funded project

the Natural Science Foundation of China

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://iopscience.iop.org/article/10.1088/1361-6641/ab1721/pdf

Reference35 articles.

1. Characteristic Evolution From Rectifier Schottky Diode to Resistive-Switching Memory With Al-Doped Zinc Tin Oxide Film

2. High-Performance Visible-Blind Ultraviolet Photodetector Based on IGZO TFT Coupled with p–n Heterojunction

3. Recent Progress on ZnO-Based Metal-Semiconductor Field-Effect Transistors and Their Application in Transparent Integrated Circuits

4. Floating-Gate Manipulated Graphene-Black Phosphorus Heterojunction for Nonvolatile Ambipolar Schottky Junction Memories, Memory Inverter Circuits, and Logic Rectifiers

5. High-Efficiency Oxide Solar Cells with ZnO/Cu2O Heterojunction Fabricated on Thermally Oxidized Cu2O Sheets

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2. Investigation of Si incorporation in (010) β-Ga2O3 films grown by plasma-assisted MBE using diluted disilane as Si source and suboxide Ga2O precursor;Applied Physics Letters;2024-03-18

3. Si doping of β -Ga2O3 by disilane via hybrid plasma-assisted molecular beam epitaxy;Applied Physics Letters;2023-02-20

4. Enhancement Mode Ga2O3 Field Effect Transistor with Local Thinning Channel Layer;Crystals;2022-06-24

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