Experimental results on transient space charge limited currents in p-n junctions-Reference-Cited by-同舟云学术

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Experimental results on transient space charge limited currents in p-n junctions

Published:1971-08 Issue:8 Volume:14 Page:661-666
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Canali C.,Ottaviani G.,Taroni A.,Zanarini G.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference14 articles.

1. Electronic Processes in Ionic Crystals;Mott,1940

2. Space Charge Conduction in Solids;Tredgold,1966

3. Space-Charge-Limited Currents in Solids

4. Simplified Theory of Space-Charge-Limited Currents in an Insulator with Traps

5. Theory of Transient Space-Charge-Limited Currents in Solids in the Presence of Trapping

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Charge Multiplication in Silicon Radiation Detectors under Dense Irradiation;IEEE Transactions on Nuclear Science;1978

2. Transient high level majority and minority carrier photocurrents in p-type silicon Schottky barrier diodes—I comparison with analytic theory;Solid-State Electronics;1976-07

3. Electron drift velocity in silicon;Physical Review B;1975-09-15

4. On the initial value of transient photocurrents in silicon;Solid-State Electronics;1974-09

5. Theory of transient photocurrents in totally depleted semiconductors;Solid-State Electronics;1973-09

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