Photoeffects in common-source and common-drain microwave GaAs MESFET oscillators-Reference-Cited by-同舟云学术

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Photoeffects in common-source and common-drain microwave GaAs MESFET oscillators

Published:1981-10 Issue:10 Volume:24 Page:935-940
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Sun H.J.,Gutmann R.J.,Borrego J.M.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference7 articles.

1. GaAs MESFET for high-speed optical detector;Pan;Spie Int. Technical Symp.,1978

2. Optical tunable MESFET microwave source;Pan,1978

3. Light induced effects in GaAs FET's;Graffeuil;Electron. Lett.,1979

4. Two and three terminal gallium arsenide FET optical detectors;Edwards;IEEE Electron Dev. Lett.,1980

5. Novel FET power oscillator;Wade;Electron. Lett.,1978

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1. Graphene-gated GaAs OPFET photodetector and oscillator for 5G applications;Journal of Physics: Conference Series;2021-05-01

2. A new analytical model for photo-dependent capacitances of GaAs MESFET’s with emphasis on the substrate related effects;Solid-State Electronics;2006-11

3. Analytical study of the photo-effects on common-source and common-drain microwave oscillators using high pinch-off n-GaAs MESFETs;Microelectronics Journal;2006-05

4. Analytical modelling of photo-effects on theS-parameters of GaAs MESFETs;Microwave and Optical Technology Letters;2005

5. New optoelectronic integrated device for optically controlled microwave oscillators;IEE Proceedings - Optoelectronics;2004-06-01

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