Novel f.e.t. power oscillator
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_19780451?crawler=true&mimetype=application/pdf
Reference9 articles.
Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. 3D Integrated 300°C Tunable RF Oscillator exploiting AlGaN/GaN HEMT for High Temperature Applications;2021 IEEE MTT-S International Microwave Symposium (IMS);2021-06-07
2. AlGaN/GaN high electron mobility transistor oscillator for high temperature and high frequency;Electronics Letters;2021-01-20
3. Low-phase noise AlGaN/GaN FET-based voltage controlled oscillators (VCOs);IEEE Microwave and Wireless Components Letters;2001-06
4. High-efficiency Ku-band oscillators;IEEE Transactions on Microwave Theory and Techniques;1998
5. An X-band integrated circuit FET oscillator with dielectric resonator stabilization;International Journal of Electronics;1983-10
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