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Enhanced conductivity and breakdown of oxides grown on heavily implanted substrates

  • Published:1991-11 Issue:11 Volume:34 Page:1207-1213
  • ISSN:0038-1101
  • Container-title:Solid-State Electronics
  • language:en
  • Short-container-title:Solid-State Electronics

Author:

Hegarty Christopher J.,Lee Jack C.,Hu Chenming

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Fowler-Nordheim current modeling of metal/ultra-thin oxide/semiconductor structures in the inversion mode, defects characterization;The European Physical Journal Applied Physics;2004-06-25

2. Novel Vertical Polysilicon Thin-Film Transistor with Excimer-Laser Annealing;Japanese Journal of Applied Physics;2003-04-30

3. The characteristics of tunnel oxides grown on textured silicon surface with a simple and reliable process;IEEE Transactions on Electron Devices;1999

4. The Characteristics of Polysilicon Oxide Grown on Amorphous Silicon Deposited from Disilane;Japanese Journal of Applied Physics;1997-08-15

5. Tunnelling in thin SiO 2;Philosophical Transactions of the Royal Society of London. Series A: Mathematical, Physical and Engineering Sciences;1996-10-15
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