Low-frequency noise as a tool for characterization of near-band impurities in silicon
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference8 articles.
1. Low frequency noise and DLTS as semiconductor device characterization tools
2. Shallow defects responsible for GR noise in MOSFETs
3. Physics of Semiconductor Devices;Sze,1981
4. Impurity ionization in MOSFETs at very low temperatures
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1. Temperature Dependent Variations of Low-Frequency Noise Sources in Cryogenic Short-Channel Bulk MOSFETs;IEEE Access;2024
2. Variable-Temperature Broadband Noise Characterization of MOSFETs for Cryogenic Electronics: From Room Temperature down to 3 K;2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM);2023-03-07
3. Study of Hot-Carrier-Induced Traps in Nanoscale UTBB FD-SOI MOSFETs by Low-Frequency Noise Measurements;IEEE Transactions on Electron Devices;2016
4. Identification of Si film traps in p-channel SOI FinFETs using low temperature noise spectroscopy;Solid-State Electronics;2015-10
5. Correlation of a generation-recombination center with a deep level trap in GaN;Applied Physics Letters;2015-03-09
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