Ensemble Monte Carlo particle simulation of nonuniformly doped submicrometer gunn diodes-Reference-Cited by-同舟云学术

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Ensemble Monte Carlo particle simulation of nonuniformly doped submicrometer gunn diodes

Published:1994-10 Issue:10 Volume:37 Page:1789-1790
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Khrenov G.,Ryzhii V.,Kartashova O.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference6 articles.

1. Large-signal characterization of unipolar III-V semiconductor diodes at microwave and millimeter-wave frequencies

2. W-band GaAs camel-cathode Gunn devices produced by MBE

3. Simulations for improved heterostructure Gunn oscillator based on transit region doping variations

4. The effect of a high energy injection on the performance of mm wave Gunn oscillators

5. High-performance, graded AlGaAs injector, GaAs Gunn diodes at 94 GHz

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Notch-δ-doped InP Gunn diodes for low-THz band applications;Journal of Electronic Science and Technology;2023-06

2. Analysis of notch-δ-doped GaAs-based Gunn diodes;Journal of Physics D: Applied Physics;2022-07-06

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