W-band GaAs camel-cathode Gunn devices produced by MBE
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_19890587?crawler=true&mimetype=application/pdf
Reference7 articles.
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. On increasing power of short InGaPAs graded-gap Gunn diodes;Visnyk of V.N. Karazin Kharkiv National University, series “Radio Physics and Electronics”;2019
2. Comparative study of 200-300 GHz microwave power generation in GaN TEDs by the Monte Carlo technique;Semiconductor Science and Technology;2001-08-10
3. Advances in Gunn Diode Technology;IETE Technical Review;1997-11
4. Influence of channel doping-profile on camel-gate field effect transistors;IEEE Transactions on Electron Devices;1996-06
5. Ensemble Monte Carlo particle simulation of nonuniformly doped submicrometer gunn diodes;Solid-State Electronics;1994-10
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