The effect of a high energy injection on the performance of mm wave Gunn oscillators-Reference-Cited by-同舟云学术

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The effect of a high energy injection on the performance of mm wave Gunn oscillators

Published:1988-07 Issue:7 Volume:31 Page:1211-1214
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Greenwald Z.,Woodard D.W.,Calawa A.R.,Eastman L.F.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference9 articles.

1. Hot Electron Transport in Semiconductors;Constant,1985

2. Physics of Semiconductor Devices;Sze,1981

3. Negative charge, barrier heights, and the conduction‐band discontinuity in AlxGa1−xAs capacitors

4. Band discontinuity for GaAs/AlGaAs heterojunction determined byC‐Vprofiling technique

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1. Analysis of notch-δ-doped GaAs-based Gunn diodes;Journal of Physics D: Applied Physics;2022-07-06

2. Computer Modeling, Characterization, and Applications of Gallium Arsenide Gunn Diodes in Radiation Environments;Nuclear Engineering and Technology;2016-10

3. Characteristic Roots of a Class of Fractional Oscillators;Advances in High Energy Physics;2013

4. Characteristics of a GaN-based Gunn diode for THz signal generation;Journal of Semiconductors;2012-08

5. High frequency investigation of graded gap injectors for GaAs Gunn diodes;Solid-State Electronics;2005-02

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