Cascaded collector current formulations of abrupt heterojunction bipolar transistors and their applications to graded HBTs with base dopant outdiffusion-Reference-Cited by-同舟云学术

Cascaded collector current formulations of abrupt heterojunction bipolar transistors and their applications to graded HBTs with base dopant outdiffusion

Published:1994-07 Issue:7 Volume:37 Page:1413-1419
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Chang Yang-Hua,Li G.P.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference12 articles.

1. Heterostructure bipolar transistors and integrated circuits

2. GaAlAs/GaAs heterojunction bipolar transistors: issues and prospects for application

3. Control of Be diffusion in molecular beam epitaxy GaAs

4. An investigation of the effect of graded layers and tunneling on the performance of AlGaAs/GaAs heterojunction bipolar transistors

5. Be redistribution during growth of GaAs and AlGaAs by molecular beam epitaxy

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. GSMBE grown In0.49Ga0.51P/GaAs heterojunction bipolar transistors with heavily beryllium doped base and undoped Spacer;Journal of Crystal Growth;2001-07

2. Failure mechanisms in compound semiconductor electron devices;Handbook of Advanced Electronic and Photonic Materials and Devices;2001

3. High Current Gain In 0.49 Ga 0.51 P/GaAs Heterojunction Bipolar Transistors with Double Spacers Grown by Gas Source Molecular Beam Epitaxy;Chinese Physics Letters;2000-12-01

4. Photo-luminescence and transmission electron microscope studies of low- and high-reliability AlGaAs/GaAs HBTs;Solid-State Electronics;2000-04

5. Discussion;Solid-State Electronics;1998-03