GSMBE grown In0.49Ga0.51P/GaAs heterojunction bipolar transistors with heavily beryllium doped base and undoped Spacer-Reference-Cited by-同舟云学术

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GSMBE grown In0.49Ga0.51P/GaAs heterojunction bipolar transistors with heavily beryllium doped base and undoped Spacer

Published:2001-07 Issue: Volume:227-228 Page:352-356
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Chen X.J,Li A.Z,Chen J.X,Chen Y.Q,Yang Q.K

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference12 articles.

1. Heterojunction bipolar transistor using a (Ga,In)P emitter on a GaAs base, grown by molecular beam epitaxy

2. Conduction‐ and valence‐band offsets in GaAs/Ga0.51In0.49P single quantum wells grown by metalorganic chemical vapor deposition

3. Ultralow recombination velocity at Ga0.5In0.5P/GaAs heterointerfaces

4. Cascaded collector current formulations of abrupt heterojunction bipolar transistors and their applications to graded HBTs with base dopant outdiffusion

5. A study of current transport in p-N heterojunctions

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Ge/GaAs Hetero-structured n-p-n Transistor;2022 IEEE 31st Microelectronics Design & Test Symposium (MDTS);2022-05-23

2. Growth of Be-doped GaInP/GaAs heterostructure bipolar transistor by all solid-source multiwafer production molecular beam epitaxy;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2004

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