Non-alloyed ohmic contacts on rapid thermally Zn diffused GaAs
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference18 articles.
1. Theoretical absorption spectra of ArKr
2. A New p-Channel AlGaAs/GaAs MIS-Like Heterostructure FET Employing Two Dimensional Hole Gas
3. Ohmic Contacts to p-GaAs with Au/Zn/Au Structure
4. Ohmic contacts to epitaxial pGaAs
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. A survey of ohmic contacts to III-V compound semiconductors;Thin Solid Films;1997-10
2. Component Evaporation, Defect Annealing, and Impurity Diffusion in the III–V Semiconductors;Rapid Thermal Processing of Semiconductors;1997
3. W(Zn) selectively deposited and locally diffused ohmic contacts top‐InGaAs/InP formed by rapid thermal low pressure metalorganic chemical vapor deposition;Applied Physics Letters;1993-05-24
4. Recent developments in ohmic contacts for III–V compound semiconductors;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1992-09
5. Silicon Nitride Application as Masks;Si Silicon;1991
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