W(Zn) selectively deposited and locally diffused ohmic contacts top‐InGaAs/InP formed by rapid thermal low pressure metalorganic chemical vapor deposition-Reference-Cited by-同舟云学术

W(Zn) selectively deposited and locally diffused ohmic contacts top‐InGaAs/InP formed by rapid thermal low pressure metalorganic chemical vapor deposition

Published:1993-05-24 Issue:21 Volume:62 Page:2652-2654
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Katz A.,El‐Roy A.,Feingold A.,Geva M.,Moriya N.,Pearton S. J.,Lane E.,Keel T.,Abernathy C. R.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.109275

Reference13 articles.

1. Zinc diffusion in InP using diethylzinc and phosphine

2. GaInAs/InP PIN Photodiodes Fabricated by MOVPE and a New Zn Diffusion Technique

3. A stable indium-phosphide diffused junction field-effect transistor with high gain and low leakage

4. Non-alloyed ohmic contacts on rapid thermally Zn diffused GaAs

5. Highly dopedp+regions by zinc diffusion utilizing metalorganic vapor‐phase epitaxy

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