Influence of carriers on the capacitance of p-n junctions with deep donors-Reference-Cited by-同舟云学术

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Influence of carriers on the capacitance of p-n junctions with deep donors

Published:1974-09 Issue:9 Volume:17 Page:931-939
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Smiljanić M.,Tjapkin D.,Djurić Z.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference13 articles.

1. p-n transition capacitance

2. Frequency dependence of the reverse-biased capacitance of gold-doped silicon P+N step junctions

3. Effects of deep impurities on n+p junction reverse-biased small-signal capacitance

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Semiconductor Junctions and Diodes;Semiconductor Devices and Integrated Electronics;1980

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