Semiconductor Junctions and Diodes
Publisher
Springer Netherlands
Reference137 articles.
1. Acosta, O.N., “Zener diode—A protecting device against voltage transients,” IEEE Trans. Industry and General Applications, IGA-5, July/August 1969, p. 481. 2. Aldridge, R.V., “On the behaviour of forward biased silicon diodes at low temperatures,” Solid-State Electronics, 17, 1974, p. 617. 3. Armstrong, H.L., “A theory of voltage breakdown of cylindrical p-n junctions, with applications,” IRE Trans. Electron Devices, ED-4, 1957, p.15. 4. Ashburn, P., D.V. Morgan, and M.J. Howes, “A theoretical and experimental study of recombination in silicon p-n junctions,” Solid-State Electronics, 18, 1975, p 5. Ashley, K.L., and J.R. Biard, “Optical microprobe response of GaAs diodes,” IEEE Trans. Electron Devices, ED-14, 1967, p. 429.
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